10n60-asemi medium and small power MOS transistor 10n60

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10N60 stay TO-220AB Gate threshold voltage in the package VGS(TH) by 4V, It is a small and medium power MOS tube .10N60 Pulse forward current ISM by 40A, Continuous drain current (ID) by 10A, Its working temperature range is -55~150 Centigrade .10N60 Power consumption of (PD) by 155W, Static drain source on resistance (RDS(ON)) by 0.85Ω.10N60 The electrical parameters of the system are ： Diode forward voltage (VSD) by 1.5V, Reverse recovery time (Trr) by 600nS, Output capacitance (Coss) by 180pF, Among them is 3 Lead .

 

10N60 Parameters to describe

model ：10N60

encapsulation ：TO-220AB

characteristic ： Medium and small power MOS tube

Electrical parameters ：10A 600V

gate threshold voltage VGS(TH)：4V

Continuous drain current (ID)：10A

Power waste (PD)：155W

Diode forward voltage (VSD)：1.5V

Static drain source on resistance (RDS(ON))：0.85Ω

Pulse forward current ISM：40A

Reverse recovery time (Trr)：600nS

Output capacitance (Coss)：180pF

Storage temperature ：-55~+150℃

Number of leads ：3

10N60 Belong to TO-220AB Package series . Its body length is 15.87mm, Plus pin length is 28.8mm, Width is 10.16mm, The height is 4.7mm, The distance between feet is 2.54mm.