当前位置:网站首页>The total investment is nearly 1.6 billion yuan! Qianzhao optoelectronics VCSEL and high-end LED chip projects officially started
The total investment is nearly 1.6 billion yuan! Qianzhao optoelectronics VCSEL and high-end LED chip projects officially started
2022-07-28 01:16:00 【Xinzhixun】
6 month 12 Japan , Qianzhao photoelectric investment is close 16 The 100 million yuan Semiconductor R & D and production project held a groundbreaking ceremony in Xiang'an District, Xiamen .
The previous announcement showed , Dry light shines on 2018 year 11 In June, it announced that it plans to invest 15.97 One hundred million yuan to build VCSEL、 High-end LED Semiconductor R & D and production projects such as chips , Xiamen Qianzhao Semiconductor Technology Co., Ltd., a wholly-owned subsidiary of the company, is responsible for undertaking .
After the project is put into operation , Predict the annual sales revenue after reaching the production capacity 96,628.29 Ten thousand yuan , Total annual profit after reaching production capacity 23,690.91 Ten thousand yuan , Annual investment profit rate of reaching production capacity 17.71%, Investment profit tax rate 18.63%, The financial internal rate of return after all investment income taxes is 21.72%; Payback period 6.01 year .
Dry illumination photoelectricity indicates , Gallium arsenide / Gallium nitride semiconductor devices are mainly attached to MOCVD Carry out epitaxial production , High technology content ; There is a strong demand in the fields of military and civil wireless communication , Relevant domestic manufacturers are scarce , The state is vigorously supporting the rapid development of this industry .
Devices made of gallium arsenide , With high frequency 、 High speed and photoelectric performance , Mainly used in the communication industry . Gallium nitride, the third generation material, is a wide band gap semiconductor material , With its wide band gap 、 High thermal conductivity 、 High breakdown field strength 、 High saturation electron drift rate 、 Stable chemical properties and strong radiation resistance , In Optoelectronics 、 High temperature high-power devices and high-frequency microwave devices have broad prospects in application .
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