Ntmfs4c05nt1g N-ch 30V 11.9a MOS tube, pdf

Adopt advanced power trench technology （ Combined with shielding grid technology ） The production of 30V、40V and 60V MOSFET. The process is optimized , It can minimize the on resistance , In addition, it also adopts excellent soft diode , Excellent switching performance can be maintained .

NTMFS4C05NT1G N-CH 30V 11.9A MOS tube
FET type ：N passageway
technology ：MOSFET（ metallic oxide ）
Leakage source voltage （Vdss）：30 V
25°C Time current - Continuous drain (Id)：11.9A（Ta）
Drive voltage ：4.5V,10V
Different Id、Vgs On resistance at ：3.4 Milliohm @ 30A,10V
Different Id when Vgs(th)：2.2V @ 250µA
Different Vgs Gate charge at  (Qg)：14 nC @ 4.5 V
Vgs：±20V
Different Vds Input capacitance at (Ciss)：1972 pF @ 15 V
FET function ：-
Power dissipation ：770mW（Ta）,33W（Tc）
working temperature ：-55°C ~ 150°C（TJ）
Installation type ： Surface mount type
Supplier device package ：5-DFN（5x6）（8-SOFL）
encapsulation / Shell ：8-PowerTDFN,5 Lead wire  

features
accord with AEC-Q101 standard , And PPAP function
Small package , Achieve compact design
Ultralow RDS(ON), Reduce the conduction loss
Optimized gate charge , Reduce switching losses
High power density
Excellent thermal conductivity
More efficient
Halogen free 、 unleaded , accord with RoHS Instructions

application
ORing
Motor driver
DC-DC converter
Power load switch
Battery management
High end computing

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