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磁存储芯片STT-MRAM的特点
2020-11-06 22:06:00 【IPSILOG】
随着半导体工艺技术的不断进步,芯片工艺制程的不断演进和成本的不断降低,半导体芯片广泛应用在物联网、个人终端、汽车电子、可穿戴设备、工业互联网等各个领域。随着芯片工艺的逐步升级,性能问题已不在是芯片设计环节的主要瓶颈,如在很多手持设备领域,低功耗设计成为了芯片设计中的关键核心问题。通过引入一种基于磁存储芯片作为内部存储器件的芯片架构,同时也用作芯片内部的高速缓存,能够有效降低芯片漏电流,有效地提升了设备使用时间,降低了整体的TCO成本,大大提升了产品竞争力。
在众多新型非易失性存储介质中,磁存储芯片(STT-MRAM)能够与CMOS半导体工艺良好兼容,利用较少的金属层即可以做到存储单元的高密度集成。同时由于其接近于静态随机存储器(SRAM)的读写速度﹑极低的静态和动态功耗、掉电不易失的特性、接近于无限的擦写次数,高温下长时间的数据保持能力以及抗强磁场辐射等特性,是作为企业级SSD控制器中数据缓存和FTL表项存储的天生优良介质。
当前众多半导体设计大厂都将MRAM芯片作为下一代非易失性存储介质的研发重点。除了台积电、三星和东芝一直在持续推进STT-MRAM 的研发之外,美国的 Everspin MRAM公司早已发布了量产STT-MRAM芯片。
将嵌入式STT-MRAM应用在芯片架构设计中,充分利用其掉电不易失数据的特性,能够对存储部分进行完全的关电设计,从而显著降低整个芯片的漏电流和静态功耗。
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https://my.oschina.net/u/4542041/blog/4702486
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