MOS tube parameters μ A method of Cox

It is known that tox It can be counted as COX, In inverse proportion .

dc After the simulation ,print model parameter( It could be dc operating point), find tox and u0 These two parameters ,tox Is the thickness of oxide layer , It can be calculated according to this Cox,u0 It's the mobility
The basic unit is changed into fF/um^2 It's a good choice .

Mainly Toxe, the electric gate oxide thickness, stay mrtlMOD=1 when , Toxe=EOT
Toxp For reference ,the physical gate oxide thickness
Toxm It seems to be just a right , In the calculation K1/K2 When used （Toxe/Toxm）
These three values seem to have to be positive . If you do SS/FF corner It is possible to scale up and down the three values at the same time

Required parameters ：
epsrox： Relative vacuum dielectric constant
toxe： Electrical equivalent gate oxide thickness , Behind the toxn5 Is the coefficient multiplied by different process angles （tt Under process angle toxn5 Namely 1）, So we can just focus on the front part
toxm： Used for parameter extraction TOX value
vth0: Threshold voltage , Behind the dvth0n5 Is the threshold voltage deviation value under different process angles
u0: Carrier mobility under the weak field , The following parameters are the same
Then calculate the parameters according to the formula （ There is an example of this ,bsim The parameter units inside should be international standard units , Just pay attention to the unit when calculating ）

Reference resources ： MOS Tube parameters μCox A way to get